Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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O. Kyrylenko^1,*, P. Lytovchenko², O. Melnychenko³, Yu. Myroshnichenko¹, D. Stratilat², V. Tartachnyk<sup>2

1</sup> Drahomanov Ukrainian State University, Kyiv, Ukraine
² Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine
³ L. V. Pisarzhevskii Institute of Physical Chemistry, National Academy of Sciences of Ukraine, Kyiv, Ukraine

^*Corresponding author. E-mail address: o.i.kyrylenko@udu.edu.ua

Abstract: The results of studies of the electro-physical characteristics of GaAsP light-emitting diodes (LEDs) in the temperature range of 77-300 K are presented. The mechanisms of current flow in different regions of the I-V characteristic and the role of screening of internal crystal fields by free carriers are discussed. The formation of a hysteresis loop in the I-V characteristic of the diode within the region of negative differential resistance is revealed, and possible causes for each section are analyzed. The activation energy of the transition process of the LED to the VDO state is determined. It is established that irradiation of GaAsP LEDs is accompanied by an increase in the non-ideality coefficient.

Keywords: GaAsP, LED, negative differential resistance, electro-physical characteristics, hysteresis phenomenon.

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