Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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I. V. Mintyanskii^1,*, P. I. Savitskii¹, V. T. Maslyuk<sup>2

1</sup> Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Chernivtsi Branch, Chernivtsi, Ukraine
² Institute of Electron Physics, National Academy of Sciences of Ukraine, Uzhhorod, Ukraine

^*Corresponding author. E-mail address: illya.mintyanskyy@gmail.com

Abstract: The effect of various doses of electron irradiation (10 MeV) on electrical properties along the layers of low-resistivity n-InSe single crystals are investigated in the range of 80 to 400 K. The parameters of the samples with the same accumulated dose (270 kGy), but at different series irradiation, are compared. The decrease of free electron density after e-influence is caused by a decreased amount of interstitial indium atoms because of their aggregation between the layers. The established decrease of mobility along the InSe layers with increasing radiation dose is considered to be due to the increased contribution of two-dimensional electrons. The extrema of R_H(T) and μ_⊥С(Т) dependencies are explained as a result of a redistribution of electrons between the 2D states and the main conduction band of InSe.

Keywords: layered crystal, indium monoselenide, electron irradiation, Hall coefficient, mobility, 2D electron gas, scattering mechanisms.

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