Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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M. Ye. Chumak^1,* , P. G. Lytovchenko², I. V. Petrenko², D. P. Stratilat², V. P. Tartachnyk<sup>2

1</sup> Drahomanov Ukrainian State University, Kyiv, Ukraine
² Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine

^*Corresponding author. E-mail address: m.ye.chumak@npu.edu.ua

Abstract: Spectral features of the original and irradiated with electrons with E = 2 MeV GaP light emitting diodes (LEDs) were studied. Recombination lines of the exciton bound on the N isoelectronic center and on the pair complexes NN1 were detected. The change in the spectral composition of radiation when passing through a section of negative differential resistance is analyzed. Dose dependences of luminescence intensity were obtained for green GaP(N) and red GaP(Zn-O) LEDs. The maximum critical radiation dose was established, after which the LEDs lost their characteristic exciton emission mechanism. The results of the annealing of irradiated LEDs are given.

Keywords: GaP, light emitting diodes, irradiation, spectral characteristics, current-voltage characteristics, electroluminescent characteristics.

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