Nuclear Physics and Atomic Energy

Ядерна фізика та енергетика
Nuclear Physics and Atomic Energy

  ISSN: 1818-331X (Print), 2074-0565 (Online)
  Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine
  Languages: Ukrainian, English
  Periodicity: 4 times per year

  Open access peer reviewed journal


 Home page   About 
Nucl. Phys. At. Energy 2008, volume 9, issue 2, pages 73-80.
Section: Radiation Physics.
Received: 06.02.2008; Published online: 30.06.2008.
PDF Full text (ru)
https://doi.org/10.15407/jnpae2008.02.073

Thermal annealing of clusters and point defects in n-Si (Cz) irradiated by fast-pile neutrons

A. P. Dolgolenko, M. D. Varentsov, G. P. Gaidar, P. G. Litovchenko

Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine

Abstract: Thermal stability of clusters and point defects in n-Si grown by Czochralski technique (Cz) was studied after irradiation by the fluence ∼ (2 ÷ 4) · 1013 no·сm-2 of fast-pile neutrons. The effective concentration of carriers after series of isochronal and isothermal annealings of irradiated n-type silicon with n0 = (0.4 ÷ 1.2) · 1014 сm-3 before irradiation was described in the framework of the defect cluster corrected model. Stages of isochronal annealing process of defect clusters were determined with activation energies (Ea) and frequency factors (ν): Еа1 = 0.81 eV, ν1 = 5.4 · 106 s-1; Еа2 = 0.4 eV, ν2 = 1 s-1; Еа3 = 1.3 eV, ν3 = 6 · 104 s-1. Isothermal annealing at 353 K of defect clusters and interstitial atoms ISi (Ec - 0.315 еV) in the conducting matrix of silicon was described with Еа = 0.74 еV and ν = (1 ÷ 3.5) · 106 s-1.

References:

1. Kimerling L. C., Blood P., Gibson W. M. Defect states in proton-bombarded silicon at T<300 K. Proc. Conf. "Defects and Radiation Effects in Semiconductors", 1978. Ser. No. 46 (Bristol-London, Inst. of Phys., 1979) p. 273.

2. Corbett J. W., Watkins G. D., Chrenko R. M., McDonald R. S. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-A Center. Phys. Rev. 121 (1961) 1015. https://doi.org/10.1103/PhysRev.121.1015

3. Dolgolenko A., Varentsov M., Gaidar G. Energy-level position of bistable defect (CiCs)o in B configuration in the forbidden band of n-Si. phys. stat. sol. (b) 241 (2004) 2914. https://doi.org/10.1002/pssb.200302060

4. Pankratz J. M., Sprague J. A., Rudee M. L. Investigation of Neutron-Irradiation Damage in Silicon by Transmission Electron Microscopy. J. Appl. Phys. 339 (1968) 101. https://doi.org/10.1063/1.1655713

5. Cheng L. J., Lori J. Сharacteristics of Neutron Damage in Silicon. Phys. Rev. 171 (1968) 856. https://doi.org/10.1103/PhysRev.171.856

6. Mukashev B. N., Tamendarov M. F. Optical Absorption and Electrical Studies of Proton-Bombarded Silicon. Радиационная физика полупроводников и родственных материалов: Тр. междунар. конф., 13 - 19 сентября 1979 г. (Тбилиси: Изд-во Тбилисского ун-та, 1980) c. 341.

7. Stein H. J. Atomic Displacement Effects in Neutron Transmutation Doping. The 2nd Intern. Conf. "Neutron Transmutation Doping in Semiconductors". Ed. by J. Meese (New York: Plenum Press, 1979) p. 229. https://doi.org/10.1007/978-1-4684-8249-2_18

8. Lee Y. H., Corbett J. W. EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexes. Phys. Rev. B 13 (1976) 2653. https://doi.org/10.1103/PhysRevB.13.2653

9. Zastavnoy A. V., Korol V. M. Radiation Defects in n-Silicon Doped with Lithium and Sodium. phys. stat. sol. (a) 113 (1989) 277. https://doi.org/10.1002/pssa.2211130204

10. Хируненко Л. И., Кобзарь О. А., Помозов Ю. В. и др. Влияние олова на реакции, протекающие с участием межузельного углерода в облученном кремнии. Физика и техника полупроводников 37 (2003) 304.

11. Медведева И. Ф., Мурин Л. И., Маркевич В. П. Отжиг комплексов вакансия-фосфор в облученных кристаллах Si. Proc. of the 4th Intern. Conf. "Interaction of Radiation with Solids" (IRS-2001), October 3 - 5, 2001 (Minsk, Belarus, 2001) p. 183.

12. Moll M., Fretwurst E., Kuhnke M., Lindstrom G. Relation between microscopic defects and macroscopic changes in silicon detector properties after hadron irradiation. Nucl. Instrum. Methods Phys. Res. B 186 (2002) 100. https://doi.org/10.1016/S0168-583X(01)00866-7

13. Whan R. E. Oxygen-Defect Complexes in Neutron-Irradiated Silicon. J. Appl. Phys. 37 (1966) 3378. https://doi.org/10.1063/1.1708867

14. Ясковец И. И. Теория реакций между точечными дефектами в твердых телах: Автореф. дис. ... физ.- мат. наук (Київ, 1972) 21 с.

15. Waite T. R. Theoretical Treatment of the Kinetics of Diffusion-Limited Reactions. Phys. Rev. 107 (1957) 463. https://doi.org/10.1103/PhysRev.107.463

16. Винецкий В. Л., Ерицян Г. Н., Конозенко И. Д., Старчик М. И. Скорость введения гамма-радиационных дефектов в кремний. Физика и техника полупроводников 2 (1968) 1236.

17. Davies G., Lightowlers E. C., Newman R. C., Oates A. S. A model for radiation damage effects in carbon-doped crystalline silicon. Semicond. Sci. Technol. 2 (1987) 524. https://doi.org/10.1088/0268-1242/2/8/009

18. Маркевич В. П., Мурин Л. И. Селективный захват межузельных атомов углерода в облученном Si. Физика и техника полупроводников 22 (1988) 911.

19. Dolgolenko A. P., Fishchuk I. I. Defect Clusters and Simple Defect Build-Up Kinetics in Fast-Neutron Irradiated n-Si. phys. stat. sol. (a) 50 (1978) 751. https://doi.org/10.1002/pssa.2210500248

20. Dolgolenko A. P. Variation of Carrier Removal Rate with Irradiation Dose in Fast-Pile Neutron Irradiated n-Si. phys. stat. sol. (a) 179 (2000) 179. https://doi.org/10.1002/1521-396X(200005)179:1%3C179::AID-PSSA179%3E3.0.CO;2-3

21. Долголенко А. П., Галушка А. П. Влияние облучения дейтронами с энергией 13,5 МэВ на электрофизические свойства n-Si. Физика и техника полупроводников (деп. ВИНИТИ, ДЭ-449) 5 (1971) 2396.

22. Варенцов М. Д., Гайдар Г. П., Долголенко О. П., Литовченко П. Г. Відпал кластерів дефектів у зразках Si та Si<Ge>, вирощених методом Чохральського. Укр. фіз. журн. 52 (2007) 372.

23. Dolgolenko A. P., Litovchenko P. G., Varentsov M. D. et al. Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen. phys. stat. sol. (b) 243 (2006) 1842. https://doi.org/10.1002/pssb.200541074

24. Dolgolenko A. P., Litovchenko P. G., Litovchenko A. P. et al. Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons. Semiconductor Physics, Quantum & Optoelectronics 7 (2004) 8. https://doi.org/10.15407/spqeo7.01.008

25. Гайдар Г. П., Долголенко О. П., Литовченко П. Г. Термічний відпал радіаційних дефектів в n-Si, опроміненому швидкими нейтронами реактора. Укр. фіз. журн. 53 (2008) 691.

26. Пекар С. И. Исследования по электронной теории кристаллов (Москва: Гостехиздат, 1951) 256 с.

27. Винецкий В. Л., Холодарь Г. А. Радиационная физика полупроводников (Київ: Наук. думка, 1979) 336 с.