Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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A. A. Groza, V. I. Varnina, P. G. Litovchenko, L. S. Marchenko, M. I. Starchik, L. I. Barabash, S. V. Berdnichenko

Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine

Abstract: Infrared absorption spectra of the Silicon single-crystals with the Germanium impurity (Ge ≤ 0.7 at. %) after the irradiation by the reactor neutron fluences of 5 · 10¹⁶ n/cm² and 5 · 10¹⁹ n/cm² are measured. It was shown that the Germanium impurity increases the radiation strength of Cz-Si to the formation of such radiation defects as divacancies. Silicon structure with the content of the Germanium from 0 to 14 at. % was studied by the selective etching method. It was shown that the uniformity of the defect (dislocation) distribution is maintained at small Germanium content ≤ 1 at. % and its homogeneous distribution within the ingot. On the base of such material the spectrometrical detectors of nuclear radiation have been produced. High Germanium concentration adulterate the homogeneity of its distribution in Silicon.

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