Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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P. G. Litovchenko¹, L. I. Barabash¹, S. V. Berdnichenko¹, D. Bizello², M. D. Varentsov¹, V. I. Varnina¹, A. A. Groza¹, O. P. Dolgolenko¹, A. Ya. Karpenko¹, T. I. Kibkalo¹, V. F. Lastovetsky¹, A. P. Litovchenko², V. N. Pidtynnykh³, L. A. Polivtsev¹, S. B. Smirnov³, M. I. Starchik<sup>1

1</sup>Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine
²Istituto Nazionale di Fisica Nucleare and Dipartimento di Fisica, Università di Padova, Italy
³Sevastopol National University of Nuclear Energy and Industry, Sevastopol, Ukraine

Abstract: In given article various methods of the increase of the radiation hardness of semiconductors materials such as silicon and InSb are discussed. Parameters of silicon irradiated by different types and fluences of high energy irradiation and annealed were studied by optical and electrical methods. It was shown that the increase of the silicon radiation hardness can be obtained first of all due to radiation-thermal treatments (preliminary radiation and annealing). The important results of the radiation hardness increase were received for neutron irradiated silicon, doped by germanium izovalent impurity.

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