Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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O. P. Budnyk¹, R. M. Vernydub², O. I. Kyrylenko^2,*, P. G. Lytovchenko³, O. I. Radkevych⁴, D. P. Stratilat³, V. P. Tartachnyk<sup>3

1</sup> Institute of Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
² Dragomanov National Pedagogical University, Kyiv, Ukraine
³ Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine
⁴ SE "SRI of Microdevices", National Academy of Sciences of Ukraine, Kyiv, Ukraine

^*Corresponding author. E-mail address: etfa@ukr.net

Abstract: The homo-transitional original and irradiated by electrons with E = 2 MeV; F = 5.9⋅10¹⁴ cm^-2 ÷ 8.2⋅10¹⁶ cm^-2 GaP LEDs were studied. The effect of radiation treatment on their electrical and optical characteristics was studied; the results of isochronous annealing of irradiated samples are given; the consequences of high-temperature annealing of output diodes are analyzed. Peculiarities of the formation of the current-voltage characteristics of red LEDs doped with Zn, O, and green LEDs doped with N under reverse bias, as well as features of the recovery of the reverse current during annealing of both types of LEDs, are revealed.

Keywords: GaP, light-emitting diode (LED), electrical and optical characteristics, current-voltage characteristics.

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