Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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R. M. Vernydub¹, O. I. Kyrylenko¹, O. V. Konoreva^2,*, P. G. Litovchenko², D. P. Stratilat², V. P. Tartachnyk², M. M. Filonenko<sup>1

1</sup> National Pedagogical Dragomanov University, Kyiv, Ukraine
² Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine

^*Corresponding author. E-mail address: konoreva@nas.gov.ua

Abstract: The features of the current-voltage characteristics of LEDs obtained on the basis of GaP-GaAsP solid solutions are considered. The results of studies of the effect of electron irradiation (E = 2 MeV, F = 3 · 10¹⁴ ÷ 2.6 · 10¹⁶ cm^-2) on the main electrophysical parameters of GaAs_1-xP_x diodes (x = 0.85 – yellow, x = 0.45 – orange) are given. The increase of differential resistance, the series resistance of the base, and barrier potential are revealed. The processes of recovery of the investigated quantities during isochronous annealing are analyzed, the mechanisms of degradation-recovery phenomena are discussed.

Keywords: GaAsP, light-emitting diode (LED), negative differential resistance, current-voltage characteristics.

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