Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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A. P. Dolgolenko, G. P. Gaidar, P. G. Litovchenko

Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine

Abstract: The dependence of concentration of defects on doping level for average cluster in n-Si was calculated. It was shown that in the framework of the Gossick's model the concentration of defects for the average cluster is in inverse proportion to the square of a cluster radius. One obtains the size distribution of defect clusters created by fast neutrons of WWR-M reactor, by the transformation of energy spectrum of the primary knock-on atom in n-Si (FZ, Cz). Threshold energy of defect clusters formation 4.7 keV by comparing n-Si crystals irradiated by deuterons and fast-pile neutrons was calculated.

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