Nuclear Physics and Atomic Energy 16 (2015) 56

Ядерна фізика та енергетика
Nuclear Physics and Atomic Energy

ISSN: 1818-331X (Print), 2074-0565 (Online)
Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine
Languages: Ukrainian, English, Russian
Periodicity: 4 times per year

Open access peer reviewed journal

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Nucl. Phys. At. Energy 2015, volume 16, issue 1, pages 56-59.
Section: Radiation Physics.
Received: 19.01.2015; Accepted: 19.03.2015; Published online: 20.04.2015.

Full Text (ua)
https://doi.org/10.15407/jnpae2015.01.056

Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions

O. M. Hontaruk, O. V. Konoreva^*, М. V. Lytovchenko, E. V. Malyi, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk

Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine

^*Corresponding author. E-mail address: okskon@meta.ua.

Abstract: Electroluminescence of green N-doped gallium phosphide light-emitting diodes was studied. The negative differential resistance region in the current-voltage characteristics was found at low temperature (Т ≤ 90 К). Possible reason of this phenomenon is the redistribution of recombinational flows between annihilation channels on isolated nitrogen atoms and annihilation channel on the NN₁ pairs.

Keywords: gallium phosphide, electroluminescence, exciton, negative differential resistance.

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