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Full text (ua) Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons
O. V. Konoreva1, E. V. Maliy1, I. V. Petrenko1, M. B. Pinkovska1, V. P. Tartachnyk1, V. V. Shlapatska2
1Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine
2SE "Radma", L. V. Pisarzhevskii Institute of Physical Chemistry, National Academy of Sciences of Ukraine, Kyiv, Ukraine
Abstract: Serial green and red GaP light emitting diodes were studied. Structures were irradiated at room temperatures with 2 MeV electrons in pulse mode and electrical characteristics were measured at 77 – 300 K. It was observed the new stage of negative differential resistance at low temperature (90 K) and the current (< 103 mA) interval, additionally to known S-type instability. Luminescence characteristics at different temperatures and injection levels were given for all types diodes. Dose dependencies of luminescence intensity on electron dose and its restoring after irradiation were also presented.
Keywords: gallium phosphide, light emitting diode, irradiation, voltage-current characteristic.
References:1. Pankow J. Optical Processes in Semiconductors (Moscow: Mir, 1973) 455 p. (Rus).
2. Berg A., Dean P. Light-Emitting Diodes Trans. from Eng.; Ed. by A. E. Yunovich (Moscow: Mir, 1979) 686 p. (Rus).
3. Dubovyi V. K., Kochkin V. I., Opylat V. Ya. et al. Ukr. Fiz. Zh. 52 (2007) 175 (Ukr).
4. Maeda K. Double injection in GaP electroluminescence diodes. Jap. J. Appl. Phys. 9 (1970) 71. https://doi.org/10.1143/JJAP.9.71
5. Bhargava R. N. Negative resistanse in GaP electroluminescent diodes. Appl. Phys. Lett. 14 (1969) 193. https://doi.org/10.1063/1.1652770
6. Manzhara V. S., Tartachnyk V. P. Ukr. Fiz. Zh. 46 (2001) 196 (Ukr).
7. Brailovs'kyi E. Yu., Konozenko Y. D., Tartachnyk V. P. Fizika Tverdogo Tela 9 (1975) 769 (Rus).
8. Brailovskiy E. Yu., Makarenko V. G., Konosenko I. D. Introduction and annealing of defects in GaP upon electron irradiation. Lattice Defects in Semiconductors: Materials of International Conference (Germany, 1975).