Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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A. P. Dolgolenko<sup>1

1</sup>Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine

Abstract: Temperature dependence of the mobility of electrons and holes in p-Si, cultivated by Czochralski method and non-crucible zone melting, after irradiation by fast reactor neutrons was considered. In the framework of the elaborated model of clusters defects the temperature dependence of the concentration of electrons and holes in silicon samples was described. It is shown that the configuration change divacancies in clusters of defects and in conducting matrix leads to increase in the height of the drift barriers and concentration longwave phonons in conducting matrix samples of silicon.

Keywords: silicon, fast neutrons, divacancy, carrier mobility.

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