Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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D. A. Zakharchuk¹, Y. V. Koval¹, L. V. Yashchynskiy¹, S. A. Fedosov<sup>2

1</sup>Lutsk National Technical University, Lutsk, Ukraine
²Lesya Ukrainka East European National University, Lutsk, Ukraine

Abstract: The influence of illumination with different intensity on changing parameter's anisotropy of mobility K = μ_⊥ / μ_∥ = m_∥ ∕ m_⊥ × 〈 τ_⊥ 〉 ∕ 〈 τ_∥ 〉 in γ-irradiated by the chosen dose examples n-Ge with heterogeneous distribution of doping impurity in crystal volume is analyzed. On the basis of experimental and theoretical calculations it is shown that in γ-irradiated n-Ge the longitudinal component of mobility μ_∥ in the separate isoenergetic ellipsoid does not practically depend on illumination intensity. The essential change of transversal mobility component μ_⊥ at the increase of illumination intensity is defined by the change in anisotropy parameter of relaxation times K_τ= 〈 τ_⊥ 〉 ∕ 〈 τ_∥ 〉 .

Keywords: semiconductor, irradiated, anisotropy, mobility.

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