Nuclear Physics and Atomic Energy

Ядерна фізика та енергетика
Nuclear Physics and Atomic Energy

  ISSN: 1818-331X (Print), 2074-0565 (Online)
  Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine
  Languages: Ukrainian, English
  Periodicity: 4 times per year

  Open access peer reviewed journal

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Nucl. Phys. At. Energy 2013, volume 14, issue 2, pages 163-171.
Section: Radiation Physics.
Received: 12.03.2013; Published online: 30.06.2013.
PDF Full text (ru)
https://doi.org/10.15407/jnpae2013.02.163

Configuration transitions of divacancies in silicon and germanium

O. P. Dolgolenko1

1Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine

Abstract: High-resistance samples p-Si (p0 = (1.63 - 7.09)·1011 cm-3) and n-Si (n0 = 1.19·1014 cm-3), grown by the floating zone melting after irradiation with fast neutron reactor at 320 °C after isothermal and isochronal annealing were studied. The energy levels of divacancy in three charge states, depending on its configuration are determined. Values of the energy levels of divacancies and A - center after their modification background impurities are considered.

Keywords: silicon, germanium, fast neutron, divacancy.

References:

1. Stein H. J. Radiation Effects in Semiconductors. Eds. J. W. Corbett, G. D. Watkins (N.Y.: Gordon and Breach, 1971) p. 125.

2. Watkins G. D., Corbett J. W. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-A Center. Phys. Rev. 121 (1961) 1001. https://doi.org/10.1103/PhysRev.121.1001

3. Bemski G. Paramagnetic Resonance in Electron Irradiated Silicon. J. Appl. Phys. 30 (1959) 1195. https://doi.org/10.1063/1.1735292

4. Frens A. M, Bennebroek M. T., Zakrzewski A. J. et al. Observation of rapid direct charge transfer between deep defects in silicon. Phys. Rev. Lett. 72 (1994) 2939. https://doi.org/10.1103/PhysRevLett.72.2939

5. Makarenko L. F. Do we know the energy levels of radiation defects in silicon? Physica B 308 (2001) 465. https://doi.org/10.1016/S0921-4526(01)00739-6

6. Brotherton S. D., Bradley P. Defect production and lifetime control in electron and γ-irradiated silicon. J. Appl. Phys. 53 (1982) 5720. https://doi.org/10.1063/1.331460

7. Watkins G. D., Corbett J. W. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy. Phys. Rev. 138 (1965) 543. https://doi.org/10.1103/PhysRev.138.A543

8. Dolgolenko A. P., Litovchenko P. G., Varentsov M. D. et al. Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen. Phys. Stat. Sol. (b) 243 (2006) 1842. https://doi.org/10.1002/pssb.200541074

9. Логвиненко Т. А., Лугаков П. Ф., Ткачев В. Д., Шуша В. В. Дефекты структуры в кремнии, облученном быстрыми электронами. Симпозиум: Радиационные дефекты в полупроводниках (Минск: Изд-во ВГУ, 1972) c. 87.

10. Моливер С. С. Метод открытой оболочки для электронной структуры дивакансии кремния. ФТТ 41 (1999) 404.

11. Nylandsted Larsen A., Bro Hansen A., Mesli A. Irradiation-induced defects in SiGe. Mater. Sci. Eng. B 154 (2008) 85. https://doi.org/10.1016/j.mseb.2008.08.003

12. Dolgolenko A. P., Fishchuk I. I. A-centres build-up kinetics in the conductive matrix of pulled n-type silicon with calculation of their recharges at defect clusters. Phys. Stat. Sol. (a) 67 (1981) 407. https://doi.org/10.1002/pssa.2210670207

13. Долголенко А. П., Литовченко П. Г., Варенцов М. Д. и др. Влияние методов выращивания и легирования на радиационную стойкость n-Si, облученного быстрыми нейтронами реактора. Вопросы атомной науки и техники. Сер. "Физика радиационных повреждений и радиационное материаловедение" 4 (2006) 175.

14. Литвинко А. Г., Мурин Л. И., Ткачев В. Д. Роль междоузельных атомов в образовании радиационных дефектов в кремнии. ФТП 10 (1976) 1083.

15. Никитина А. Г., Зуев В. В. Бистабильные амфотерные центры в полупроводнике. ФТП 42 (2008) 141.

16. Konozenko I. D., Semenyuk A. K., Khivrich V. I. Radiation Defects Created by 60Co γ-rays in p- and n-type Si of High-Purity. Phys. Stat. Sol 35 (1969) 1043; Radiation Defects in Si of High Purity. Radiation Effects 8 (1971) 121. https://doi.org/10.1002/pssb.19690350257

17. Долголенко А. П., Варенцов М. Д., Гайдар Г. П., Литовченко П. Г. Скорость введения дефектов в зависимости от дозы облучения p-Si быстрыми нейтронами реактора. Ядерна фізика та енергетика 2 (2007) 89. https://jnpae.kinr.kyiv.ua/20(2)/Articles_PDF/jnpae-2007-2(20)-0089-Dolgolenko.pdf

18. Abdullin Kh. A., Mukashev B. N., Tamendarov M. F., Tashenov T. B. New defect states in irradiated p-type silicon. Phys. Lett. A 144 (1990) 198. https://doi.org/10.1016/0375-9601(90)90700-X