Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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A. P. Dolgolenko, P. G. Litovchenko, M. D. Varentsov, G. P. Gaidar, A. P. Litovchenko

Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine

Abstract: It has been studied the radiation hardness of the n-Si samples with low and high concentration of oxygen (in range from 5 · 10¹⁵ to 7 · 10¹⁷ сm^-3), which were irradiated by fast-pile neutrons of WWR-M reactor. It has been shown that the fluence of fast-pile neutrons for which the concentration of the electrons tend to intrinsic value does not depend on the concentrations of oxygen. The dose and temperature dependences of the effective concentration of carriers have been measured. The theoretical calculation has been carried out in the framework of Gossik's model, taking into account the recharges of defects not only in n-Si conducting matrix but also in the space-charge region of defect clusters. The necessity of the additional overlapping of the space-charge regions resulting from the introduction of point defects has been shown. The model for explanation of dose dependence for n → p conversion in n-Si samples with low and high concentrations of the oxygen was proposed. It has been supposed that the space distribution of the assemblage of di-vacancies and Si di-interstitial atoms is responsible for Fermi level position near the midgap under high fluencies.

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