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Ядерна фізика та енергетика
ISSN:
1818-331X (Print), 2074-0565 (Online) |
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Temperature relations of Volt-Ampere characteristics of light emitting patterns GaP
S. О. Kanevsky1, I. V. Kolyadenko1, V. Ja. Opylat2, V. P. Tartachnyk1
1Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine
2National Pedagogical Dragomanov University, Kyiv, Ukraine
Abstract: It is designed the improved methodology of Volt-Ampere characteristics (VACh) measurement with the opportunity of the settings of measurings discrete discretization step of both on the electrical voltage and on the current. It is revealed that the shape of VACh GaP structures essentially depends on the mode of measurings. S-shaped character of VACh and thin structure of oscillation in the field of the high currents, detected at low temperatures in a mode of discrete sampling on the current, can be explained by devastation and the subsequent occupancy of deep level which corresponds to traps of minority carriers of the current. On the low-temperature VACh the red light-emitting diodes GaP, irradiated by reactor neutrons, measured in a mode of discrete sampling on an electrical voltage, is revealed a N-shaped section where existence can be caused by the presence of disordering fields.
References:1. Bhargava R. N. Negative Resistance in GaP Electroluminiscent Diodes. Appl. Phys. Lett. 14 (1969) 193. https://doi.org/10.1063/1.1652770
2. Maeda K. Double Injection in GaP Electroluminiscent Diodes. Jap. J. Appl. Phys. 9 (1970) 71. https://doi.org/10.1143/JJAP.9.71
3. Динс Д., Виньярд Д. Радиационные эффекты в твердых телах. Под ред. Г. С. Жданова (Москва: ИЛ, 1960) 204 c.
4. Немец О. Ф., Литовченко П. Г., Волков В. В. и др. Глубокие уровни в фосфиде галлия, облученном нейтронами. Докл. АН УССР. Сер. А 9 (1990) 60.