Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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V. I. Varnina, A. A. Groza, P. G. Litovchenko, M. I. Starchik, L. A. Polivtsev, G. G. Shmatko, L. S. Marchenko

Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine

Abstract: It was received the acceleration of defect formation and oxygen precipitation in neutron irradiated and annealed (700 °C) Cz silicon. The possibility of oxygen precipitation temperature decrease was shown for irradiated silicon, that was useful for getter metal impurities by oxide precipitates.

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