Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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A. P. Dolgolenko, P. G. Litovchenko, M. D. Varentsov, G. P. Gaidar

Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine

Abstract: Float-zone and phosphorus-doped n-Si samples after irradiation by fast-pile neutrons and subsequent annealing at room temperature were investigated. The calculation of effective concentration of carriers after irradiation was carried out in the framework of Gossick's model taking into account the recharges of defects both in conducting matrix of n-Si and in the space-charge region of defect clusters. The distribution function of electrons on the acceptor level of bistable defect (C_iC_s)⁰ when the concentration of this defect is the function of the Fermi level in conducting matrix of n-Si is determined. The concentration of bistable interstitial-carbon-substitutional-carbon pair and its energy level at (Е_с - 0.123 eV) in forbidden band of silicon were calculated. On the observable level of stable configuration C_iC_s (A^-)-defects at (Е_с - 0.147 eV) the theoretical change of carriers concentration in the conduction band simulated by the recharges (C_iC_s)⁰ was imposed. The concentration of these (C_iC_s)⁰ -defects has been changed in the process of their recharges. It is shown that in n-Si with high carbon and oxygen concentration after affiliating of oxygen atoms to bistable defect (C_iC_s)⁰ in a forbidden band of n-Si the stable defects not only in "А" but also in "В" configurations are formed with energy levels at (Е_с - 0.13 eV) and (Е_с - 0.09 eV).

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