Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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A. P. Dolgolenko, P. G. Litovchenko, M. D. Varentsov, V. F. Lastovetsky

Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine

Abstract: High-resistivity neutron-transmutation-doped n-Si (NTD) grown by a method of a floating-zone melting in the atmosphere of argon after irradiation with different doses of fast-pile neutrons is investigated. The temperature dependences of effective concentration of carriers after irradiation are calculated. The calculation was carried out in the framework of Gossick's model taking into account the recharges of defects both in conducting matrix of n-Si and in the space-charge region of defect clusters. It is shown that the average radius of defect clusters increases with irradiation dose growth. The introduction rate of divacancies in the conducting matrix of n-Si (NTD) is five times less than in n-Si (FZ). During the repeated transmutation doping of such silicon to concentration of carriers ∼ 10¹⁴ cm^-3, the repeated irradiation by fast-pile neutrons has shown that the introduction rate of divacancies has decreased approximately by two times. It is possible to assume that in neutron-transmutation-doped n-Si after recovery annealing recombination centres of divacancies are remained.

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