Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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A. P. Dolgolenko, P. G. Litovchenko, O. P. Litovchenko, V. F. Lastovetsky

Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine

Abstract: Silicon n-type samples with resistivity ∼2.5 · 10³ Om · cm grown by the method of the floating-zone (FZ) in vacuum, in argon atmosphere (Ar) received by the method of transmutation doping (NTD) are investigated at room temperature before and after irradiation by fast-pile neutrons. Our experimental studies has shown that the radiation hardness of n-type silicon is determined in the first place by the introduction rate of the defect clusters and then already by the introduction rate of point defects in conducting matrix of n-Si. The effective concentration of carriers, measured at room temperature, is determined in the framework of Gossick's model taking into account the recharges of defects both in conducting matrix of n-Si and in the space-charge region of defect clusters. The temperature dependence of the concentration of carriers in conducting matrix of n-Si is simulated with constant introduction rate of two acceptor levels at (E_c – 0.43 eV) and (E_c – 0.315 eV) under the calculating of the dependence dose of effective concentration of carriers. Our research has shown that neutron-transmutation-doped n-Si, grown by the method of a floating-zone in argon atmosphere possess the increased radiation hardness.

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