Nuclear Physics and Atomic Energy

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Nuclear Physics and Atomic Energy

  ISSN: 1818-331X (Print), 2074-0565 (Online)
  Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine
  Languages: Ukrainian, English
  Periodicity: 4 times per year

  Open access peer reviewed journal

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Nucl. Phys. At. Energy 2001, volume 2, issue 3, pages 118-119.
Section: Radiation Physics.
Received: 19.03.2001; Published online: 30.09.2001.
PDF Full text (ru)
https://doi.org/10.15407/jnpae2001.03.118

Peculiarities of conductivity dose dependences of the previously irradiated semiconductors on an example of indium antimonide, irradiated with protons

G. A. Vikhliy, A. Ya.Karpenko, P. G. Litovchenko, A. P. Litovchenko

Institute for Nuclear Research of the National Academy of Sciences of Ukraine, Kyiv, Ukraine

Abstract: First results of investigation of defects formation efficiency in the previously irradiated semiconductors on an example of 47 MeV protons irradiated indium antimonide is given. The conclusion is made, that combination of preliminary irradiation with annealing is expected to become the basis of thermal-radiation technology of semiconductors radiation hardness increasing.

References:

1. Litovchenko P., Lemeileur F., Litovchenko A. et al. 4th ROSE Workshop on Radiation Hardening of Silicon Detectors, CERN 2 - 4 Dec., 1998 (Geneva: CERN) p. 161.