Nuclear Physics and Atomic Energy

Ядерна фізика та енергетика
Nuclear Physics and Atomic Energy

  ISSN: 1818-331X (Print), 2074-0565 (Online)
  Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine
  Languages: Ukrainian, English
  Periodicity: 4 times per year

  Open access peer reviewed journal

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Nucl. Phys. At. Energy 2000, volume 1, issue 2, pages 106-113.
Section: Radiation Physics.
Published online: 30.12.2000.
PDF Full text (ua)
https://doi.org/10.15407/jnpae2000.02.106

Influence of neutron irradiation on the defect creation in thermally treated Cz silicon

V. I. Varnina, A. A. Groza, P. G. Litovchenko, L. S. Marchenko, M. I. Starchik, G. G. Shmatko, V. F. Lastovetsky

Institute for Nuclear Research of the National Academy of Sciences of Ukraine, Kyiv, Ukraine

Abstract: Oxygen precipitation in neutron irradiated and thermally treated silicon crystals has been studied varying neutron fluence (1015 - 1019 n/см2) and annealing temperature (600 - 1000 oC). IR spectroscopy and selective etching were used for the investigation. It had been found that precipitation process was accelerated in irradiated silicon in wide temperature range. The precipitation rate has became weakly dependent on annealing temperature with fluence increasing above 1017 n/cm2 . These effects clearly show the main role of radiation point defects in the oxygen precipitation

References:

1. Borghesi A. Oxygen precipitation in silicon. J. Appl. Phys. 77 (1995) 4169. https://doi.org/10.1063/1.359479

2. Gottlieb A. J., Oehrlein G. S., Corbett J. W. Early Stage of Oxygen Clustering and its Influence on Electrical Behavior of Silicon. Defects in Semiconductors (New York, 1983) p. 107. https://doi.org/10.1557/PROC-14-107

3. Гроза А. А., Литовченко П. Г., Николаева Л. Г. и др. Распад пересыщенного твердого раствора кислорода в нейтронно-облученном кремнии. Физика и техника полупроводников 22 (1988) 2244.

4. Гроза А. А., Варнина В. И., Литовченко П. Г. и др. Структурно-фазовые превращения при термообработке облученного кремния и влияние их на электрофизические свойства и радиационную стойкость. International Conference on Radiation Material Science, РМ-90 (Харків, 1990) Т. 4, c. 127.

5. Гроза А. А., Круликовская М. П., Старчик М. И., Антоненко Р. С. Поведение кислорода в монокристаллическом кремнии при высокотемпературной обработке в γ-поле. Физика и техника полупроводников 25 (1991) 1821.

6. Гроза А. А., Хиврич В. И. Околокраевое поглощение в кремнии, облученном нейтронами и 1.5 МэВ электронами. Физика и техника полупроводников 13 (1979) 870.