Nuclear Physics and Atomic Energy

Ядерна фізика та енергетика
Nuclear Physics and Atomic Energy

  ISSN: 1818-331X (Print), 2074-0565 (Online)
  Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine
  Languages: Ukrainian, English
  Periodicity: 4 times per year

  Open access peer reviewed journal


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Nucl. Phys. At. Energy 2000, volume 1, issue 1, pages 91-97.
Section: Radiation Physics.
Published online: 30.06.2000.
PDF Full text (ru)
https://doi.org/10.15407/jnpae2000.01.091

The development of the periodical distribution of point defects in binary semiconductors

V. V. Mykhaylovskyy

Institute for Nuclear Research of the National Academy of Sciences of Ukraine, Kyiv, Ukraine

Abstract: An instability of the stationary uniform distribution of point defects in irradiated binary semiconductors is considered. This instability arises due to elastic interaction of point defects created by radiation. It was shown that the periodical distribution of point defects have to be developed in some cases. The area of existence and the parameters of this periodical distribution were estimated for GaAs.

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